SVD640F Datasheet | Silan Microelectronics

DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES - 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVD640T SVD640D SVD640DTR SVD640F Package TO-220-3L TO-252-2L TO-252-2L TO-220F-3L Marking SVD640T SVD640D SVD640D SVD640F Material Pb free Halogen free Halogen free Pb free Packing Tube Tube Tape & Reel Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD640T 150 1.2 Ratings SVD640D 200 ±20 18 11 72 110 0.88 635 150 -65～+150 35 0.28 Unit A W W/°C MJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.1 Page 1 of 8 Silan Microelectronics SVD640T/D/F_Datasheet THERMAL CHARACTERISTICS...