SVD640F Description
SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode....
SVD640F Key Features
- 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability