SVD640F Datasheet | Silan Microelectronics

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Features - 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V - Low gate charge - Low Crss - Fast switching -...